2n5152l silicon npn t ransisto r dat a sheet description sem i coa offers: ? screening and processing per mil-p r f-19500 appe n d i x e ? jan level (2n5152lj) ? jantx level (2n5152ljx) ? jantxv level (2N5152LJV) ? jans level (2n5152ljs) ? qci to the a pplicab le le vel ? 100% die visual inspecti on per mil-std-750 method 2072 for jantxv and j ans ? radiation testing (total dose) upon request please contact semicoa for special configura tions ww w. semicoa .co m o r (714 ) 979 -1 900 applications ? hi g h -s pee d po wer swi t c hi ng ? lo w po wer ? npn silicon tran sistor features ? herm etically sealed t o -5 m e tal can ? also available in chi p c o nfiguration ? c h i p ge om et ry 9 7 0 1 ? r e fere nce doc um ent : m i l-pr f - 19 5 00/ 54 4 benefits ? qu alification lev e ls: jan, jantx, ja ntxv and ja ns ? rad i atio n testi n g av ailab l e absolute maximum ratings t c = 2 5 c u n l e ss o t h e r w ise sp ecified p a r a m e t e r s y m b o l ratin g u n i t collector-em itter voltage v ceo 80 vo lts collector-base voltage v cbo 10 0 vo lts emitter-base vo ltag e v ebo 5. 5 vo lts c o l l ect or c u r r e nt , c ont i n u o u s i c 2 a po wer dissip a tion, t a = 25 o c derate lin early abo v e 25 o c p t 1 5. 7 w mw / c po wer dissip a tion, t c = 25 o c derate lin early abo v e 25 o c p t 11 .8 66 .7 w mw / c therm a l resistance r ja r jc 17 5 15 c/ w ope r at i n g j unc t i on tem p erat u r e stora g e tem p e r ature t j t stg -6 5 t o + 2 00 c www. sem i coa .com semicoa corporation rev. d-2 333 mccormick avenue, costa m e sa, california 92626 714.97 9.1 900, fax 714. 55 7.4541 page 1 of 2 cop y right ? 2 0 10
2n5152l silicon npn t ransisto r dat a sheet rev. d-2 333 mccormick avenue, costa m esa, california 92626 714.97 9.1 900, fax 714. 55 7.4541 page 2 of 2 www. sem i coa .com electrical characte r ist i cs character i stics specifi ed at t a = 2 5 c off characteristics parameter sy mbol test conditi ons min t y p max units collector-em itter br eak dow n vo ltag e v (br)ce o i c = 10 0 m a 80 vo lts collector-em itter cutoff current i ceo v ce = 40 v o l t s 50 a collector-em itter cutoff current i cex v ce = 60 v o lts, v eb = 2 vo lts, t a = 150 c 50 0 a collector-em itter cutoff current i ces1 i ces2 v ce = 6 0 vo lts v ce = 10 0 v o l t s 1 1 a ma emitter-base cu to ff c u rren t i ebo1 i ebo2 v eb = 4 vo lts v eb = 5. 5 vol t s 1 1 a ma on characteristics pulse te st: p u l se widt h = 300 s, d u t y c y cle 2.0 % parameter sy mbol test conditi ons min t y p max units dc cu rre nt ga in h fe1 h fe2 h fe3 h fe4 i c = 50 m a , v ce = 5 vo lts i c = 2. 5 a, v ce = 5 vo lts i c = 5 a, v ce = 5 vo lts i c = 2. 5 a, v ce = 5 vo lts t a = -55 c 20 30 20 15 90 base-em i tter vo ltag e v be v ce = 5 vo lts, i c = 2. 5 a 1. 45 vo lts base-em i tter satu ration vo ltag e v besat1 v besat2 i c = 2. 5 a, i b = 25 0 m a i c = 5 a, i b = 50 0 m a 1. 45 2. 20 vo lts co llecto r -em i t t er saturation vo ltag e v cesat1 v cesat2 i c = 2. 5 a, i b = 25 0 m a i c = 5 a, i b = 50 0 m a 0. 75 1. 50 vo lts dynamic characteristics parameter sy mbol test conditi ons min t y p max units mag n itud e ? c o mm o n emitte r, sho r t circu it forward c u rren t transfer ratio |h fe | v ce = 5 vo lts, i c = 50 0 m a , f = 1 0 m h z 6 sm a ll sig n a l sh ort circu it forward cu rren t tran sfer ratio h fe v ce = 5 vo lts, i c = 10 0 m a , f = 1 kh z 20 op en circu it ou t p u t cap acitan ce c obo v cb = 10 v o l t s , i e = 0 m a , f = 1 m h z 25 0 pf s w itching characteristics stora g e tim e fall ti m e satu rated tu rn-on tim e saturate d t u r n -o ff tim e t s t f t on t off i c = 5 a, i b1 =i b2 = 50 0 m a , v beof f = 3.7 volts, r l = 6 ? 1. 4 0. 5 0. 5 1. 5 s semicoa corporation cop y right ? 2 0 10
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